IXFK44N50F Datasheet - IXYS

IXFK44N50F Power MOSFET

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die IXFX 44N50F IXFK 44N50F VDSS = 500 V ID25 = 44 A RDS(on) = 120 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt P D TJ T JM Tstg T L Md Weight Symbol V DSS VGS(th) IGSS IDSS RDS(on) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°.

IXFK44N50F Features

* l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC

IXFK44N50F Datasheet (99.16 KB)

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Datasheet Details

Part number:

IXFK44N50F

Manufacturer:

IXYS

File Size:

99.16 KB

Description:

Power mosfet.

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