IXFK44N55Q Datasheet - IXYS

IXFK44N55Q Power MOSFET

Advance Technical Information HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr IXFK 44N55Q IXFX 44N55Q VDSS = 550 V ID25 = 44 A RDS(on) = 120 mΩ t rr ≤ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) IGSS I DSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse wi.

IXFK44N55Q Features

* l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Applications l DC-DC convert

IXFK44N55Q-IXYS.pdf