IXFK420N10T Datasheet - IXYS

IXFK420N10T - Power MOSFET

Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK420N10T IXFX420N10T VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 420A 2.6mΩ 140ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limit.

IXFK420N10T Features

* z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Synchronous Recification z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Po

IXFK420N10T-IXYS.pdf

IXFK420N10T Datasheet Preview — Preview of IXFK420N10T PDF

Datasheet Details

Part number:

IXFK420N10T

Manufacturer:

IXYS

File Size:

174.85 KB

Description:

Power mosfet.

IXFK420N10T Distributor

📁 Related Datasheet

IXFK40N60 IXFK40N90P IXFK43N60 IXFK44N50 IXFK44N50F IXFK44N50P

📌 All Tags

IXFK420N10T Power MOSFET IXYS