IXFH9N80, IXFH8N80 Datasheet - IXYS

IXFH9N80 Power MOSFETs

Preliminary Data Sheet HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) trr IXFH8N80 800V 8A IXFH9N80 800V 9A 1.1Ω 250 ns 0.9Ω 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM ID25 IDM IAR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 8N80 9N80 8N80 9N80 8N80 9N80 800 800 ±20 ±30 8 9 32 36 8 9 V V V V A A A A A.

IXFH9N80 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Rectifier Applications

IXFH8N80-IXYS.pdf

IXFH9N80 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFH9N80, IXFH8N80. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFH9N80, IXFH8N80

Manufacturer:

IXYS

File Size:

201.57 KB

Description:

Power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFH9N80, IXFH8N80.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IXFH9N80Q Power MOSFETs (IXYS)

IXFH9N100 Power MOSFET (IXYS Corporation)

IXFH90N20Q Power MOSFET (IXYS Corporation)

IXFH90N20X3 Power MOSFET (IXYS)

IXFH94N30T N-Channel MOSFET (INCHANGE)

IXFH94N30T Power MOSFET (IXYS)

IXFH96N15P PolarHT HiPerFET Power MOSFET (IXYS)

IXFH96N20P Power MOSFET (IXYS)

TAGS

IXFH9N80 IXFH8N80 Power MOSFETs IXYS

IXFH9N80 Distributor