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IXFH9N80

Power MOSFETs

IXFH9N80 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Rectifier Applications

IXFH9N80 Datasheet (201.57 KB)

Preview of IXFH9N80 PDF

Datasheet Details

Part number:

IXFH9N80

Manufacturer:

IXYS

File Size:

201.57 KB

Description:

Power mosfets.
Preliminary Data Sheet HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) trr IXFH8N80 800.

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TAGS

IXFH9N80 Power MOSFETs IXYS

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