IXFH9N80 - Power MOSFETs
Preliminary Data Sheet HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) trr IXFH8N80 800V 8A IXFH9N80 800V 9A 1.1Ω 250 ns 0.9Ω 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM ID25 IDM IAR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 8N80 9N80 8N80 9N80 8N80 9N80 800 800 ±20 ±30 8 9 32 36 8 9 V V V V A A A A A.
IXFH9N80 Features
* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
rated
* Low package inductance
- easy to drive and to protect
* Fast intrinsic Rectifier
Applications
