IXFH96N20P - Power MOSFET
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 96N20P IXFT 96N20P IXFV 96N20P V DSS ID25 RDS(on) trr = 200 V = 96 A ≤ 24 mΩ ≤ 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C .
IXFH96N20P Features
* (TAB)
D (TAB)
D (TAB) D = Drain TAB = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max.
200
V
VGS(th)
VDS = VGS, ID = 4 mA
2.5
5.0 V
I
GSS
V GS
=
±20
V, DC
V DS
=
0
±100 nA
IDSS
VDS = VDSS