IXFH96N20P, IXFV96N20PS - Power MOSFET

IXYS

Datasheet Details

Part number	IXFH96N20P, IXFV96N20PS
Manufacturer	IXYS
File Size	266.72 KB
Description	Power MOSFET
Datasheet	IXFV96N20PS_IXYS.pdf
Note	This datasheet PDF includes multiple part numbers: IXFH96N20P, IXFV96N20PS. Please refer to the document for exact specifications by model.

(TAB) D (TAB) D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 200 V VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V I GSS V GS = ±20 V, DC V DS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 150° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 24 m Ω l Fast Intrinsic Diode l International standard packages l Unclamped Inducti.

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Published: Jun 20, 2010 |