IXFH96N15P, IXFV96N15P Datasheet - IXYS

IXFH96N15P PolarHT HiPerFET Power MOSFET

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXFH 96N15P IXFV 96N15P IXFV 96N15PS VDSS ID25 trr RDS(on) =www.DataSheet4U.com 150 V = 96 A = 24 mΩ < 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤.

IXFH96N15P Features

* z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Characteristic Values Min. Typ. Max. 150 3.0 5.0 ±100 25 1000 24 V V nA µA µA mΩ z z International s

IXFV96N15P_IXYS.pdf