UGF8JT Datasheet | Vishay

FEATURES - Glass passivated chip junction - Ultrafast recovery time - Soft recovery characteristics - Low switching losses, high efficiency 2 UG8x T PIN 1 PIN 2 2 1 UGF8x T PIN 1 - High forward surge capability - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) - ponent in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC CASE PIN 2 TO-263AB K 2 1 UGB8x T PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in high voltage and high frequency power factor correction application. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr tfr VF .. TJ max. 8A 500 V, 600 V 100 A 25 ns 500 ns 1.5 V 150 °C Case: TO-220AC, ITO-220AC, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum working reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min SYMBOL VRRM VRWM VRMS VDC IF(AV) IFSM TJ, TSTG VAC UG8HT 500 400 350 500 8.0 100 - 55 to + 150 1500 UG8JT 600 480 420 600 UNIT V V V V A A °C V Document Number: 88767 Revision: 12-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay., PDD-Asia@vishay., PDD-Europe@vishay. .vishay. 1 UG(F,B)8HT & UG(F,B)8JT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum...