Datasheet Summary
Vishay Semiconductors
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High Speed Infrared Emitting Diode, RoHS pliant, 940 nm, GaAlAs, DDH
Features
- Package type: leaded
- Package form: T-1, clear epoxy
- Dimensions: Ø 3 mm
- Peak wavelength: λp = 940 nm
- High speed
- High radiant power
- High radiant intensity
94 8636
- Angle of half intensity: ϕ = ± 22°
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching to Si photodetectors
DESCRIPTION
VSLB3940 is a high speed infrared emitting diode in GaAlAs, DDH technology, molded in a clear plastic package.
- Lead (Pb)-free ponent
- Lead (Pb)-free ponent in accordance RoHS 2002/95/EC and WEEE 2002/96/EC...