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VSLB3940 Datasheet High Speed Infrared Emitting Diode

Manufacturer: Vishay

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General Description

VSLB3940 is a high speed infrared emitting diode in GaAlAs, DDH technology, molded in a clear plastic package.

• Lead (Pb)-free component • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Infrared remote control units PRODUCT SUMMARY COMPONENT VSLB3940 Ie (mW/sr) 65 ϕ (deg) ± 22 λp (nm) 940 tr (ns) 15 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSLB3940 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.1, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 1.0 1.5 160 100 - 25 to + 85 - 40 to + 100 260 300 UNIT V mA A A mW °C °C °C °C K/W www.vishay.com 288 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81931 Rev.

1.0, 30-Sep-08 www.DataSheet4U.com VSLB3940 High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH Vishay Semiconductors 180 120 100 80 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21318 IF - Forward Current (mA) RthJA

Overview

VSLB3940 Vishay Semiconductors www.DataSheet4U.com High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs,.

Key Features

  • Package type: leaded.
  • Package form: T-1, clear epoxy.
  • Dimensions: Ø 3 mm.
  • Peak wavelength: λp = 940 nm.
  • High speed.
  • High radiant power.
  • High radiant intensity 94 8636.
  • Angle of half intensity: ϕ = ± 22°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching to Si photodetectors.

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