Description
VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed.
Features
- Package type: leaded.
- Package form: TELUX.
- Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6.
- Peak wavelength: λp = 940 nm.
- High reliability.
- High radiant power.
- High radiant intensity.
- Angle of half intensity, vertical: ϕv = ± 18°.
- Angle of half intensity, horizontal: ϕh = ± 36°
19232.
- Low forward voltage.
- Suitable for high pulse current operation.
- High modulation bandwidth: fc = 24 MHz.
VSLB9530S Datasheet
