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VSLY5850 - High Speed Infrared Emitting Diode

Description

As part of the SurfLightTM portfolio, the VSLY5850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in a clear, untinted plastic package, with a parabolic lens.

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Leads with stand-off.
  • Peak wavelength: λp = 850 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Narrow angle of half intensity: ϕ = ± 3°.
  • Suitable for high pulse current operation.
  • Good spectral matching with CMOS cameras.
  • Material categorization: For definitions of compliance please see www. vishay. com/do.

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Datasheet Details

Part number VSLY5850
Manufacturer Vishay
File Size 105.30 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet VSLY5850 Datasheet
Additional preview pages of the VSLY5850 datasheet.

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Full PDF Text Transcription

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www.vishay.com VSLY5850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology 22114 DESCRIPTION As part of the SurfLightTM portfolio, the VSLY5850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in a clear, untinted plastic package, with a parabolic lens.
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