Datasheet Summary
.vishay.
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Features
- Package type: leaded
- Package form: TELUX
- Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6
- Peak wavelength: λp = 940 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity, vertical: ϕv = ± 18°
- Angle of half intensity, horizontal: ϕh = ± 36°
- Low forward voltage
- Suitable for high pulse current operation
- High modulation bandwidth: fc = 24 MHz
DESCRIPTION
VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed. It is molded in a clear high...