Datasheet4U Logo Datasheet4U.com

VSLB9530S - High Speed Infrared Emitting Diode

Description

VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed.

Features

  • Package type: leaded.
  • Package form: TELUX.
  • Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6.
  • Peak wavelength: λp = 940 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity, vertical: ϕv = ± 18°.
  • Angle of half intensity, horizontal: ϕh = ± 36° 19232.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • High modulation bandwidth: fc = 24 MHz.

📥 Download Datasheet

Datasheet preview – VSLB9530S

Datasheet Details

Part number VSLB9530S
Manufacturer Vishay
File Size 338.67 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet VSLB9530S Datasheet
Additional preview pages of the VSLB9530S datasheet.

📁 Similar Datasheet

  • VSLB3940 - High Speed Infrared Emitting Diode (Vishay Siliconix)
  • VSL045N06MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSL080N06MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSL100N10MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSL280N15MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Other Datasheets by Vishay
  • VSLB3948 - High Speed Infrared Emitting Diode
  • VSLB4940 - High Speed Infrared Emitting Diode
  • VSLY3943 - High Speed Infrared Emitting Diode
  • VSLY5850 - High Speed Infrared Emitting Diode

Full PDF Text Transcription

Click to expand full text
VSLB9530S www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: TELUX • Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity, vertical: ϕv = ± 18° • Angle of half intensity, horizontal: ϕh = ± 36° 19232 • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz DESCRIPTION VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed.
Published: |