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VSLB9530S - High Speed Infrared Emitting Diode

General Description

VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed.

Key Features

  • Package type: leaded.
  • Package form: TELUX.
  • Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6.
  • Peak wavelength: λp = 940 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity, vertical: ϕv = ± 18°.
  • Angle of half intensity, horizontal: ϕh = ± 36° 19232.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • High modulation bandwidth: fc = 24 MHz.

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Datasheet Details

Part number VSLB9530S
Manufacturer Vishay
File Size 338.67 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet VSLB9530S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VSLB9530S www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: TELUX • Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity, vertical: ϕv = ± 18° • Angle of half intensity, horizontal: ϕh = ± 36° 19232 • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz DESCRIPTION VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed.