VSLB9530S - High Speed Infrared Emitting Diode

Product Overview

Vishay

Datasheet Details

Part number	VSLB9530S
Manufacturer	Vishay
File Size	338.67 KB
Description	High Speed Infrared Emitting Diode
Datasheet	VSLB9530S Datasheet
Additional preview pages of the VSLB9530S datasheet.

Product details

Description

VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed. Good spectral matching with Si photodetectors Compatible with wave solder processes according to CECC 00802 Material categorization: For definitions of compli

Features

Package type: leaded.
Package form: TELUX.
Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6.
Peak wavelength: λp = 940 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity, vertical: ϕv = ± 18°.
Angle of half intensity, horizontal: ϕh = ± 36° 19232.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 24 MHz.

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Published: Nov 11, 2013 |