VSLB9530S Description
VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed. It is molded in a clear high power TELUX package with an oval lens resulting in angle of half intensities in vertical direction of ± 18° and in horizontal direction of ± 36°. Good spectral matching with Si photodetectors patible with wave solder processes according to CECC 00802...
VSLB9530S Key Features
- Package type: leaded
- Package form: TELUX
- Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6
- Peak wavelength: λp = 940 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity, vertical: ϕv = ± 18°
- Angle of half intensity, horizontal: ϕh = ± 36°
- Low forward voltage
VSLB9530S Applications
- Emitter source for gesture recognition applications
- Emitter source for 3D TV
- Emitter source for mid range proximity detection
- Emitter source for object/presence detection