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VSLB4940 - High Speed Infrared Emitting Diode

General Description

VSLB4940 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package.

Key Features

  • Package type: leaded.
  • Package form: T-1, clear epoxy.
  • Dimensions: Ø 3 mm.
  • High speed.
  • High radiant power.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Angle of half intensity: ϕ = ± 22°.
  • Peak wavelength: λp = 940 nm.
  • Good spectral matching to Si photodetectors.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VSLB4940
Manufacturer Vishay
File Size 103.48 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet VSLB4940 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VSLB4940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW 94 8636-2 DESCRIPTION VSLB4940 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package. FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • High speed • High radiant power • Low forward voltage • Suitable for high pulse current operation • Angle of half intensity: ϕ = ± 22° • Peak wavelength: λp = 940 nm • Good spectral matching to Si photodetectors • Material categorization: for definitions of compliance please see www.vishay.