VSLB4940 Overview
VSLB4940 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package.
VSLB4940 Key Features
- Package type: leaded
- Package form: T-1, clear epoxy
- Dimensions: Ø 3 mm
- High speed
- High radiant power
- Low forward voltage
- Suitable for high pulse current operation
- Angle of half intensity: ϕ = ± 22°
- Peak wavelength: λp = 940 nm
- Good spectral matching to Si photodetectors