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1N4760A - Silicon Power Z-Diodes

Features

  • D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ.
  • tolerance ± 5%.

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Datasheet Details

Part number 1N4760A
Manufacturer Vishay
File Size 40.79 KB
Description Silicon Power Z-Diodes
Datasheet download datasheet 1N4760A Datasheet
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1N4728A...1N4761A Vishay Telefunken Silicon Power Z–Diodes Features D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5% Applications 94 9369 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions Tamb 50°C x Type Symbol PV IZ Tj Tstg Value 1 PV/VZ 200 –65...+200 Unit W mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=9.5mm (3/8”), TL=constant Symbol RthJA Value 100 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.2 Unit V Document Number 85587 Rev. 2, 01-Apr-99 www.vishay.
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