K3011P
Overview
The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
- Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
- Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275
- Thickness through insulation ≥ 0.75 mm General features:
- BSI: BS EN 41003, BS EN 60095 (BS 415),
