S525T
Vishay Telefunken
N–Channel MOS-Fieldeffect Triode, Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
High frequency stages up to 300 MHz.
Features
D Integrated gate protection diodes
D Low feedback capacitance
D Low noise figure
1
D
G
94 9280
23
S525T Marking: LB
Plastic case (SOT 23)
1=Source, 2=Gate , 3=Drain
13 581
12624
S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source voltage
Drain current
Gate-source peak current
Total power dissipation
Channel temperature
Tamb ≤ 60 °C
Storage temperature range
Type
Symbol
VDS
ID
±IGSM
Ptot
TCh
Tstg
Value
20
30
10
200
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthChA
Value
450
Unit
K/W
Document Number 85045
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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