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WMG10N60VD - Super Junction Power MOSFET

General Description

WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance.

WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.

Key Features

  • VDS =650V @ Tj,max.
  • IDM =12.5A.
  • Typ. RDS(on) =0.8Ω.
  • 100% UIS tested.
  • Pb-free plating, Halogen free.

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Datasheet Details

Part number WMG10N60VD
Manufacturer WAYON
File Size 589.16 KB
Description Super Junction Power MOSFET
Datasheet download datasheet WMG10N60VD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WML10N60VD, WMK10N60VD, WMH10N60VD, WMM10N60VD WMN10N60VD, WMO10N60VD, WMP10N60VD, WMG10N60VD 600V 0.8Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =650V @ Tj,max  IDM =12.5A  Typ. RDS(on) =0.