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BCX53 Datasheet Preview

BCX53 Datasheet

PNP Plastic-Encapsulate Transistor

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PNP Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
BCX53
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
MAXIMUM RATINGS ( TA=25°C unless otherwise noted)
Rating
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current Continuous
IC
Total Device Dissipation TA=25°C
Junction Temperature Range
PD
TJ
Storage Temperature Range
Tstg
Value
-100
-80
-5.0
-1.0
500
+150
-55 to +150
Unit
V
V
V
A
mW
˚C
˚C
Device Marking
BCX53=AH , BCX53-10=AK , BCX53-16=AL
OFF CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage, IC = -100µA, IE = 0
Collector-Emitter Breakdown Voltage, IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage, IE = -10µA, IC = 0
Collector Cut-off Current, VCB = -30V, IE = 0
Emitter Cut-off Current, VEB = -5.0V, IC = 0
Symbol Min Max
V(BR)CBO
V(BR)CEO
-
-
-100
-80
V(BR)EBO
-
-5.0
ICBO - -0.1
IEBO - -0.1
Unit
V
V
V
µA
µA
WEITRON
http://www.weitron.com.tw
1/3
12-Oct-06




WEITRON

BCX53 Datasheet Preview

BCX53 Datasheet

PNP Plastic-Encapsulate Transistor

No Preview Available !

BCX53
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol Min Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain
VCE = -2.0V, IC = -150mA
VCE = -2.0V, IC = -5.0mA
VCE = -2.0V, IC = -500mA
Collector-Emitter Saturation Voltage
IC = -500mA, IB = -50mA
Base-Emitter Voltage
VCE = -2.0V, IC = -500mA
TransitionFrequence
VCE = -5V, IC = -10mA, f = 100MHz
BCX53
BCX53-10
BCX53-16
hFE1 63 - 250
63 - 160
100 - 250 -
hFE2 63 -
-
hFE3 40 -
-
VCE(sat)
-
- -0.5 V
VBE(ON)
fT
-
50
- -1.0 V
- - MHz
WEITRON
http://www.weitron.com.tw
2/3
12-Oct-06


Part Number BCX53
Description PNP Plastic-Encapsulate Transistor
Maker WEITRON
Total Page 3 Pages
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