The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Darlington Transistor PNP Silicon
MMBTA64
COLLECTOR
3
1
BASE
2
EMITTER
3
1 2
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
Symbol
VCES VCBO VEBO
IC
Value
-30 -30 -10 -500
Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristics Total Device Dissipation FR-5 Board(1) TA =25 C Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Symbol PD
R θJA TJ,Tstg
Device Marking
MMBTA63=2U , MMBTA64=2V
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage(IC =-100 uAdc, IB=0) Collector Cufoff Current(VCB=-30Vdc, IE=0) Emitter Cufoff Current(VEB =-10Vdc, IC=0) 1. FR-5=1.0 I I0.75I I0.062 in 2.
MMBTA64 Datasheet
