Click to expand full text
MPSA64 / MMBTA64 / PZTA64
Discrete POWER & Signal Technologies
MPSA64
MMBTA64
C
PZTA64
C
E C B
E C B
TO-92
E
SOT-23
Mark: 2V
B
SOT-223
PNP Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30 30 10 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
MMBTA64 Datasheet
