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PZT2907A
PNP Silicon Planar Epitaxial Transistor P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25 C Junction Temperature Storage, Temperature
BASE 1
Symbol VCEO VCBO VEBO IC(DC)
PD Tj Tstg
COLLECTOR 2, 4
3 EM ITTER
SOT-223
1. BASE 2.COLLECTOR
3.EMITTER 4.COLLECTOR
1 2 3
4
Value -60 -60 -5.0 -600 1.5
150
-55 to +150
Unit Vdc Vdc Vdc mAdc W
C
C
Device Marking
PZT2907A=2907A
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.