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2SD2908 - NPN EPITAXIAL SILICON TRANSISTOR

Key Features

  • Power dissipation TPCM: 0.5 W (Tamb=25℃) . ,LCollector current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2.

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Datasheet Details

Part number 2SD2908
Manufacturer WEJ
File Size 73.74 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet 2SD2908 Datasheet

Full PDF Text Transcription for 2SD2908 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD2908. For precise diagrams, and layout, please refer to the original PDF.

RoHS 2SD2908 2SD2908 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating an...

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r current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain Collector-emitter saturation voltage ETransition frequency LCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Test conditions Ic=50µA, IE=0 Ic=1mA, IB=0 IE=50µ