2SD2908 Datasheet | Jiangsu Changjiang Electronics

m o .c U Plastic-Encapsulate Transistors SOT-89 4 t e e h S TRANSISTOR (NPN) SOT-89 2SD2908 a t a 1. D Features . w dissipation Power 2. w 1 P : 0.5 W (Tamb=25℃) w 2 BASE COLLECTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector...