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m o .c U Plastic-Encapsulate Transistors SOT-89 4 t e e h S TRANSISTOR (NPN) SOT-89 2SD2908 a t a 1. D FEATURES . w dissipation Power 2. w 1 P : 0.5 W (Tamb=25℃) w 2
BASE COLLECTOR
CM
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Transition frequency
Collector output capacitance
m o .c U 4 t e e h S a t a .D w w w
3.
2SD2908 Datasheet
