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RoHS 2SD2908
2SD2908 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.5 W (Tamb=25℃)
.,LCollector current
ICM: 5 A Collector-base voltage
OV(BR)CBO:
50 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain
Collector-emitter saturation voltage
ETransition frequency LCollector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE(1) VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0 Ic=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.
2SD2908 Datasheet