Datasheet4U Logo Datasheet4U.com

BAV70LT1 - DIODE

Datasheet Summary

Features

  • TPower dissipation . ,LPD: 225 mW(Tamb=25℃) Forward Current IF: OReverse Voltage 200 mA 2.9 1.9 0.95 0.95 0.4 VR: 70 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +15℃ 1 1. 2.4 1.3 SOT-23 3 2 1.BASE 2.

📥 Download Datasheet

Datasheet preview – BAV70LT1

Datasheet Details

Part number BAV70LT1
Manufacturer WEJ
File Size 250.95 KB
Description DIODE
Datasheet download datasheet BAV70LT1 Datasheet
Additional preview pages of the BAV70LT1 datasheet.

📁 Similar Datasheet

  • BAV70LT1 - CASE 318-08/ STYLE 9 SOT-23 (TO-236AB) (Motorola Inc)
  • BAV70LT1 - Monolithic Dual Switching Diode Common Cathode (ON Semiconductor)
  • BAV70LT1 - Monolithic Dual Switching Diode Common Cathode (Leshan Radio Company)
  • BAV70LT1G - Dual Switching Diode Common Cathode (ON Semiconductor)
  • BAV70LT3 - (BAV70LT1 / BAV70LT3) Monolithic Dual Switching Diode Common Cathode (ON Semiconductor)
  • BAV70LT3G - Dual Switching Diode Common Cathode (ON Semiconductor)
  • BAV70L - Dual Switching Diode Common Cathode (ON Semiconductor)
  • BAV70L3 - Silicon Switching Diode (Infineon Technologies AG)
  • BAV70LP - DUAL SURFACE MOUNT SWITCHING DIODE (Diodes)
  • BAV70 - SMALL SIGNAL DIODE (EIC)
Other Datasheets by WEJ

Full PDF Text Transcription

Click to expand full text
RoHS BAV70LT1 SOT-23 Plastic-Encapsulate Diodes BAV70LT1 SWITCHING DIODE DFEATURES TPower dissipation .,LPD: 225 mW(Tamb=25℃) Forward Current IF: OReverse Voltage 200 mA 2.9 1.9 0.95 0.95 0.4 VR: 70 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +15℃ 1 1. 2.4 1.3 SOT-23 3 2 1.BASE 2.EMITTER 3.COLLECTOR Unit:mm ONICMarking A4 CTRELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) EParameter LReverse breakdown voltage EReverse voltage leakage current Symbol V(BR) IR Test conditions IR= 100µA VR=70V MIN MAX 70 2.5 WEJForward voltage IF=1mA VF IF=10mA IF=50mA IF=150mA 715 855 1000 1250 UNIT V µA mV Diode capacitance CD VR=0V,f=1MHz 1.5 pF Reverse recovery time IF=IR=10mA t r r IR=1mA ,VR=5V RC=100Ω 6 nS WEJ ELECTRONIC CO.
Published: |