WEJ Datasheet | Specifications & PDF Download

NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1100MHz 2SC1812 SOT-23 1

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RoHS BB910 VHF VARIABLE CAPACITANCE DIODES F E AT U R E S Excellent Iinearity Matched to 2.5% DC28:2.5:ratio:16 Low series resistance .,LTAPPLICATI

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66 -66  5.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better rever

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66 -66  5.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better rever

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66 -66  5.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better rever

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RoHS D965 D965 TRANSISTOR (NPN) TO-92 TDFEATURES .,LPower dissipation PCM: 0.75 W (Tamb=25℃) OCollector current ICM: 5 A CCollector-base volta

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2SC536 2SC536 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current

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RoHS S9011 S9011 F EATURE Pow er dissipation P CM: TRANSISTOR (NPN) TO-92 1 . EMITTER 2. BASE 0 .31 W (Tamb=25℃) 3. COLLECTOR Co llector curren

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RoHS Fast Switching Rectifiers TYP Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified sine-wave V

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TPT5609 TPT5609 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 Collector-base voltage A V(BR)CBO: 25

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RoHS BAT85 Schottky Barrier Diode TDFeatures 1. High reliability .,L2. Very low forward voltage 3. Integrated protection ring against static discharg

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RoHS BA282/BA283 Band switching diode TDFeatures 1. Low differential forward resistance .,L2. Low diode capacitance 3. High reverse impedance Applica

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RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified

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2SC536 2SC536 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current

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RoHS 1SS355 1SS355 FAST SWITCHING DIODES TDFEATURES SOD-323 + - O.,LMARKING: A CMaximum Ratings and Electrical Characteristics, Single Diode @TA=2

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  A92 NPN Silicon Epitaxial Planar Transistor FEATURES z Collector-Emitter voltage:VCEO=300V. z Collector current up to 500mA. z Complement to

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RoHS BCX56 BCX56 TRANSISTOR (NPN) DFEATURES TPower dissipation PCM: .,LCollector current 0.5 ICM: 1 Collector-base voltage V(BR)CBO: 100 W (Ta

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