Light Emitting Diode www.DataSheet4U.com SHENZHEN .
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SS510 - 5.0A Surface Mount Schottky Barrier
66-66 5.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better rever.
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TPT5609 - NPN Transistor
TPT5609 TPT5609 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 Collector-base voltage A V(BR)CBO: 25.
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2SC536 - NPN Transistor
2SC536 2SC536 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current .
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BB910 - VHF VARIABLE CAPACITANCE DIODES
RoHS BB910 VHF VARIABLE CAPACITANCE DIODES F E AT U R E S Excellent Iinearity Matched to 2.5% DC28:2.5:ratio:16 Low series resistance .,LTAPPLICATI.
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SS54 - 5.0A Surface Mount Schottky Barrier
66-66 5.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better rever.
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D965 - NPN Transistor
RoHS D965 D965 TRANSISTOR (NPN) TO-92 TDFEATURES .,LPower dissipation PCM: 0.75 W (Tamb=25℃) OCollector current ICM: 5 A CCollector-base volta.
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2AP9 - Fast Switching Rectifiers
RoHS Fast Switching Rectifiers TYP Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified sine-wave V.
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BAT85 - Schottky Barrier Diode
RoHS BAT85 Schottky Barrier Diode TDFeatures 1. High reliability .,L2. Very low forward voltage 3. Integrated protection ring against static discharg.
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2CZRU2 - Silicon And Fast Recovery Rectifiers
RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified .
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SS56 - 5.0A Surface Mount Schottky Barrier
66-66 5.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better rever.
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C536 - 2SC536
2SC536 2SC536 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current .
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IS2473 - Fast Switching Rectifiers
RoHS Fast Switching Rectifiers TYP Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified sine-wave V.
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SD101CWS - SCHOTTKY DIODES
RoHS SD101AWS-SD101CWS SD101AWS-SD101CWSFEATURES SCHOTTKY DIODES SOD-323 .,LTDMARKING: SD101AWS: S1 SD101BWS: S2 OSD101CWS: S3 Maximum Ratings an.
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S9011 - NPN Transistor
RoHS S9011 S9011 F EATURE Pow er dissipation P CM: TRANSISTOR (NPN) TO-92 1 . EMITTER 2. BASE 0 .31 W (Tamb=25℃) 3. COLLECTOR Co llector curren.
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BAS21LT1 - DIODE
SWITCHING DIODE RoHS BAS21LT1 Features Power dissipation PD : 225 mW (Tamb=25 C) Pluse Drain DIF : 200 mA TReverse Voltage VR : 250V .,LOperating a.
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2AP10 - Fast Switching Rectifiers
RoHS Fast Switching Rectifiers TYP Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified sine-wave V.
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2SB764 - PNP Transistor
RoHS 2SB764 2SB764 TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current I.
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A92 - NPN Silicon Epitaxial Planar Transistor
A92 NPN Silicon Epitaxial Planar Transistor FEATURES z Collector-Emitter voltage:VCEO=300V. z Collector current up to 500mA. z Complement to .
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DB107S - SINGLE-PHASE BRIDGE RECTIFIER
RoHS DF005S-DF10S SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Amperes F E AT U R E S Glass passivated chip junction.