WEJ
2SC1812 - NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER
High Current Gain Bandwidth Product fT=1100MHz
2SC1812
SOT-23
1
(39 views)
WEJ
BB910 - VHF VARIABLE CAPACITANCE DIODES
RoHS BB910
VHF VARIABLE CAPACITANCE DIODES
F E AT U R E S
Excellent Iinearity Matched to 2.5%
DC28:2.5:ratio:16
Low series resistance
.,LTAPPLICATI
(35 views)
WEJ
SS510 - 5.0A Surface Mount Schottky Barrier
66 -66
5.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V
Features
• Batch process design, excellent power dissipation offers
better rever
(24 views)
WEJ
2SC536 - NPN Transistor
2SC536
2SC536
FEATURES Power dissipation PCM:
TRANSISTOR (NPN)
TO-92
1. EMITTER
400 mW (Tamb=25℃)
2. COLLECTOR 3. BASE 1 2 3
Collector current
(21 views)
WEJ
SS54 - 5.0A Surface Mount Schottky Barrier
66 -66
5.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V
Features
• Batch process design, excellent power dissipation offers
better rever
(21 views)
WEJ
SS56 - 5.0A Surface Mount Schottky Barrier
66 -66
5.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V
Features
• Batch process design, excellent power dissipation offers
better rever
(20 views)
ETC
UCY7400 - (UCY74 Series) Czterokrotna dwuwej ciowa bramka NAND
(19 views)
WEJ
TPT5609 - NPN Transistor
TPT5609
TPT5609 TRANSISTOR (NPN)
FEATURES Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 1 Collector-base voltage
A
V(BR)CBO: 25
(18 views)
WEJ
1SS355 - DIODE
RoHS 1SS355
1SS355 FAST SWITCHING DIODES
TDFEATURES
SOD-323 +
-
O.,LMARKING: A
CMaximum Ratings and Electrical Characteristics, Single Diode @TA=2
(18 views)
WEJ
BA282 - Band switching diode
RoHS BA282/BA283
Band switching diode TDFeatures
1. Low differential forward resistance
.,L2. Low diode capacitance
3. High reverse impedance
Applica
(16 views)
WEJ
BAT85 - Schottky Barrier Diode
RoHS BAT85
Schottky Barrier Diode TDFeatures
1. High reliability
.,L2. Very low forward voltage
3. Integrated protection ring against static discharg
(15 views)
WEJ
D965 - NPN Transistor
RoHS D965
D965 TRANSISTOR (NPN)
TO-92
TDFEATURES
.,LPower dissipation
PCM: 0.75 W (Tamb=25℃)
OCollector current
ICM: 5 A
CCollector-base volta
(15 views)
WEJ
C536 - 2SC536
2SC536
2SC536
FEATURES Power dissipation PCM:
TRANSISTOR (NPN)
TO-92
1. EMITTER
400 mW (Tamb=25℃)
2. COLLECTOR 3. BASE 1 2 3
Collector current
(13 views)
WEJ
S9011 - NPN Transistor
RoHS
S9011
S9011
F EATURE Pow er dissipation P CM:
TRANSISTOR (NPN)
TO-92
1 . EMITTER
2. BASE
0 .31 W (Tamb=25℃)
3. COLLECTOR
Co llector curren
(13 views)
WEJ
MCR100-6 - Silicon Planar PNPN Thyristor
(13 views)
WEJ
3DD13001 - NPN Transistor
(13 views)
WEJ
A1625 - PNP Transistor
(13 views)
WEJ
2AP9 - Fast Switching Rectifiers
RoHS
Fast Switching Rectifiers
TYP
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified sine-wave
V
(13 views)
WEJ
1SS226 - DIODE
RoHS
1SS226 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current IF : 100 mA Re
(12 views)
WEJ
2CZRU4Z - Silicon And Fast Recovery Rectifiers
RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified
(12 views)