. ,LPower dissipation
PCM: 0.75 W (Tamb=25℃)
OCollector current
ICM: 5 A
CCollector-base voltage
V(BR)CBO:
42 V
Operating and storage junction temperature range
ICTJ, Tstg: -55℃ to +150℃
1.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
D965. For precise diagrams, and layout, please refer to the original PDF.
RoHS D965 D965 TRANSISTOR (NPN) TO-92 TDFEATURES .,LPower dissipation PCM: 0.75 W (Tamb=25℃) OCollector current ICM: 5 A CCollector-base voltage V(BR)CBO: 42 V Operating ...
View more extracted text
tor current ICM: 5 A CCollector-base voltage V(BR)CBO: 42 V Operating and storage junction temperature range ICTJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE 123 NELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter OCollector-base breakdown voltage RCollector-emitter breakdown voltage TEmitter-base breakdown voltage CCollector cut-off current EEmitter cut-off current ELDC current gain JCollector-emitter saturation voltage Symbol Test conditions MIN V(BR)CBO Ic=1mA, IE=0 42 V(BR)CEO Ic= 1mA, IB=0 22 V(BR)EBO IE= 10µA, IC=0 6 ICBO VCB= 30V, IE=0 IEBO VEB= 6V, IC=0 hFE(1) VCE= 2V, IC= 0.
D965 Datasheet
