Datasheet4U Logo Datasheet4U.com

D965 - NPN Transistor

Features

  • . ,LPower dissipation PCM: 0.75 W (Tamb=25℃) OCollector current ICM: 5 A CCollector-base voltage V(BR)CBO: 42 V Operating and storage junction temperature range ICTJ, Tstg: -55℃ to +150℃ 1.

📥 Download Datasheet

Datasheet preview – D965

Datasheet Details

Part number D965
Manufacturer WEJ
File Size 134.16 KB
Description NPN Transistor
Datasheet download datasheet D965 Datasheet
Additional preview pages of the D965 datasheet.

📁 Similar Datasheet

  • D965 - TRANSISTOR (Jiangsu Changjiang Electronics)
  • D965 - NPN TRANSISTOR (Stanson Technology)
  • D965 - Silicon NPN Transistor (Panasonic)
  • D965 - NPN General Purpose Transistor (SeCoS)
  • D965-R - (D965-R/-T) NPN Plastic-Encapsulate Transistors (MCC)
  • D965-T - (D965-R/-T) NPN Plastic-Encapsulate Transistors (MCC)
  • D965A - NPN Transistor (Unisonic Technologies)
  • D965ASS - NPN EPITAXIAL SILICON TRANSISTOR (Unisonic Technologies)
  • D965SS - NPN EPITAXIAL SILICON TRANSISTOR (Unisonic Technologies)
Other Datasheets by WEJ

    Full PDF Text Transcription

    Click to expand full text
    RoHS D965 D965 TRANSISTOR (NPN) TO-92 TDFEATURES .,LPower dissipation PCM: 0.75 W (Tamb=25℃) OCollector current ICM: 5 A CCollector-base voltage V(BR)CBO: 42 V Operating and storage junction temperature range ICTJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE 123 NELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter OCollector-base breakdown voltage RCollector-emitter breakdown voltage TEmitter-base breakdown voltage CCollector cut-off current EEmitter cut-off current ELDC current gain JCollector-emitter saturation voltage Symbol Test conditions MIN V(BR)CBO Ic=1mA, IE=0 42 V(BR)CEO Ic= 1mA, IB=0 22 V(BR)EBO IE= 10µA, IC=0 6 ICBO VCB= 30V, IE=0 IEBO VEB= 6V, IC=0 hFE(1) VCE= 2V, IC= 0.
    Published: |