SeCoS Halbleitertechnologie GmbH D965
NPN General Purpose Transistor
| Part No. | D965 |
|---|---|
| Datasheet | D965 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN General Purpose Transistor |
| Buy | Stock & Price |
FEATURES
● Audio amplifier● Flash unit of camera
● Switching circuit CLASSIFICATION OF hFE(2) Rank R Range 340 - 600 T 560 - 950 V 900 - 2000 TO-92 GH J AD B K E CF Emitter Collector
●Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C unless otherwise specified) Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current -Continuous Cpllector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 42 22 6 5 750 +150, -55 ~ +150 Collector ● Base Emitter Unit V V V A mW °C
ELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise specified) Parameter Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut - Off Current Emitter Cut - Off Current DC Current Gain Collector - Emitter Saturation Voltage Transition Frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat) fT Min.