2SD999 - NPN EPITAXIAL SILICON TRANSISTOR

WEJ

Key Features

Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A . ,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2.

2SD999 npn epitaxial silicon transistor by WEJ - Datasheet Preview

Datasheet Details

Part number	2SD999
Manufacturer	WEJ
File Size	207.36 KB
Description	NPN EPITAXIAL SILICON TRANSISTOR
Datasheet	2SD999 Datasheet

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RoHS 2SD999 2SD999 TRANSISTOR (NPN) FEATURES Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A .,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3.