WEJ 2SD999
NPN EPITAXIAL SILICON TRANSISTOR
| Part No. | 2SD999 |
|---|---|
| Datasheet | 2SD999 Download |
| Manufacturer |  WEJ |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A .,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter ICCollector-base breakdown voltage Collector-emitter breakdown voltage NEmitter-base breakdown voltage OCollector cut-off current REmitter cut-off current TDC current gain CCollector-emitter saturation voltage EBase-emitter saturation voltage LBase-emitter voltage ETransition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE (sat) VBE fT Cob Test conditions Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=1A IC=1A, IB=100mA IC=1A, IB=100mA VCE=6V, IC=10mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz MIN TYP MAX UNIT 30 V 25 V 5V 0.1 µA 0.1 µA 90 400 50 0.4 V 1.2 V 0.6 0.7 V 130 MHz 22 pF EJCLASSIFICATION OF hFE(1) WRank CM CL CK Range 90-180 135-270 200-400 Marking WEJ ELECTRONIC CO.