2SD999 Description
2SD999 Transistor (NPN) (Ta=25℃ unless otherwise specified) Symbol Parameter V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) VBE Cob fT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage...
2SD999 Key Features
- Low Collector-Emitter Saturation Voltage
- Mini Power Type Package
- Excellent DC Current Gain Linearity
- Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%