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2SD999 - NPN Silicon Transistor

Key Features

  • World standard miniature package:SOT-89. Low collector saturation voltage. Excellent dc current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse).
  • Total power dissipation Junction temperature Storage temperature.
  • Pulse Test PW 10ms, Duty Cycle 50%. Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain.

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SMD Type Transistors NPN Silicon Epitaxial Transistor 2SD999 Features World standard miniature package:SOT-89. Low collector saturation voltage. Excellent dc current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) * Total power dissipation Junction temperature Storage temperature * Pulse Test PW 10ms, Duty Cycle 50%. Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating 30 25 5 1 1.5 2.