The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NPN Silicon Epitaxial Transistor
FEATURES
z Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA)
z Excellent DC Current Gain Linearity: hFE=140Typ.( VCE=1.0V, IC=1.0A)
z Complements to PNP type 2SB798
Pb
Lead-free
Production specification
2SD999
SOT-89
ORDERING INFORMATION
Type No.
Marking
2SD999
CM/CL/CK
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO IC PC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Collector power dissipation
30 V 25 V 5.0 V 1.0 A 2.0 W
Tj Junction Temperature
-55 to +150
℃
Tstg Storage Temperature
-55 to +150
℃
E117 Rev.B
www.gmicroelec.
2SD999 Datasheet
