2SD999 Datasheet | Galaxy Microelectronics

NPN Silicon Epitaxial Transistor Features z Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA) z Excellent DC Current Gain Linearity: hFE=140Typ.( VCE=1.0V, IC=1.0A) z plements to PNP type 2SB798 Pb Lead-free Production specification SOT-89 ORDERING INFORMATION Type No. Marking CM/CL/CK Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector power dissipation 30 V 25 V 5.0 V 1.0 A 2.0 W Tj Junction Temperature -55 to +150 ℃ Tstg Storage Temperature -55 to +150 ℃ E117 Rev.B...