Datasheet Summary
TPT5609 TRANSISTOR (NPN)
Features
Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 1 Collector-base voltage
V(BR)CBO: 25 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92L
1. EMITTER 2. COLLECTOR 3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) VBE fT
Cob
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