Micro Commercial Components TPT5609
NPN Epitaxial Silicon Transistor
| Part No. | TPT5609 |
|---|---|
| Datasheet | TPT5609 Download |
| Manufacturer |  Micro Commercial Components |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
x Excellent linearity of Current Gain x Low saturation voltage● Halogen free available upon request by adding suffix "-HF" TPT5609 NPN Epitaxial Silicon Transistor
MAXIMUM RATINGS
Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 20 25 5.0 1.0 0.75 -55 to +150 -55 to +150 Unit V V V A W OC OCELECTRICAL CHARACTERISTICS
@ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units OFF CHARACTERISTICS BVCBO Collector-Base Breakdown Voltage (IC=10ӴAdc, IE=0) BVCEO Collector-Emitter Breakdown Voltage (IC=1mAdc, IB=0) BVEBO ICBO Emitter-Base Breakdown Voltage (IE=10uAdc, IC=0) Collector Cutoff Current (VCB=20Vdc,IE=0) IEBO Emitter Cutoff Current (VEB=5.0Vdc, IC=0) ON CHARACTERISTICS 25 --- --- Vdc 20 --- --- Vdc 5.0 --- --- Vdc --- --- 1 uAdc --- --- 1 uAdc hFE VBE(on) VCE(sat) fT Cob DC Current gain (IC=500mAdc, VCE=2.
