1N914B - SIGNAL DIODE

WILLAS

Key Features

Items Symbol Ratings Unit Dimensions (DO-35).
Extremely Low VF Reverse Voltage VR 75 V.
Extremely thin package .112 (2.85) .100 (2.55) Reverse Recovery Time Power Dissipation 3.33mW/°C (25°C) trr P 4 500 ns.
Low stored charge.
Majority carrier conduction mW 1.02(26.0) MIN. .022(0.55) .018(0.45) Forward Current IF 300 mA Junction Temp. Storage Temp. Tj -65 to 175 °C .153(3.6) Tstg -65 to 175 °C.

1N914B signal diode by WILLAS - Datasheet Preview

Datasheet Details

Part number	1N914B
Manufacturer	WILLAS
File Size	328.45 KB
Description	SIGNAL DIODE
Datasheet	1N914B Datasheet

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WILLAS 1N914B SC VO 0.1AMP Scho 1N914B SIGNAL DIODE Pb Free Product Absolute Maximum Ratings (Ta=25°C) FEATURES Items Symbol Ratings Unit Dimensions (DO-35) * Extremely Low VF Reverse Voltage VR 75 V * Extremely thin package .112 (2.85) .100 (2.55) Reverse Recovery Time Power Dissipation 3.33mW/°C (25°C) trr P 4 500 ns * Low stored charge * Majority carrier conduction mW 1.02(26.0) MIN. .022(0.55) .018(0.45) Forward Current IF 300 mA Junction Temp. Storage Temp. Tj -65 to 175 °C .153(3.6) Tstg -65 to 175 °C MECHANICAL DATA.132(3.0) .059 (1.5) .043 (1.1) .076 (1.95) S .01 .004 (0.