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WILLAS

2SA1201 Datasheet Preview

2SA1201 Datasheet

Plastic-Encapsulate Transistors

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WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SA12T0H1RU
FM1200-M+
Pb Free Product
Features
Batch process design, excellent power dissipation offers
TRANbSetItSerTrOevRers(Pe NleaPk)age current and thermal resistance.
Low profile surface mounted application in order to
FEAToUpRtimEiSze board space.
z
••HHLiogigwhhpcvouowrlretearngltoecsasp, ah
igh efficiency.
bility, low forward
vol
tage
d
ro
p.
z HHigighh struargnesictaiopnabfirleityq.uency
z PGbu-aFrrderiengpfaocr okvaegrveolitsagaevpariolatebcltieon.
Ultra high-speed switching.
RSoilHicSonperpoitdauxicatl fpolarnpaar cckhiinp,gmceotadlesislicuoffnixjunGction.
HLaelaodg-ferenefrpeaertspmroedeut ecnt vfioror npmaecnktianlgstcaonddaerdssuofffix “H”
MIL-STD-19500 /228
MAXIRMoHUSMprRodAucTtIfNorGpaSck(inTga=co2d5esufufixn"lGe"ss otherwise noted)
SymMbHoeallcoghenafrneeicpraodluPdcatrafaotrmapeatcekring code suffix "H"Value
Unit
Package outline
SOD-123H
SOT-890.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
3. EMITTER
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
VCBOEpoxy :CUoLlle9c4t-oVr-0BarasteeVdoflltaamgee retardant
-120
V
0.040(1.0)
0.024(0.6)
VCEOCase : MColldecetdorp-Elamsittitce,rSVOolDta-g1e23H
-120
V
VEBO
TerminaElms i:tPtelra-BteadseteVrmoltiangaels,
solderable
per
M-IL5-S
,
TD-750 V
0.031(0.8) Typ.
0.031(0.8) Typ.
IC ColleMcteotrhCoudr2re0n2t6-Continuous
PC
Polarity : Indicated by cathode band
Collector Power Dissipation
Mounting Position : Any
TJ
Junction Temperature
Weight : Approximated 0.011 gram
-0.8
0.5
150
A
W
Dimensions in inches and (millimeters)
Tstg Storage Temperature
-55-150
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ERSLiantEginleCgspThaRat s2IeC5℃hAaLlfawmCabvHieenA, t6Rt0eHAmzpC,erTerasEtiusRrtievIeSunoTlfeIisCnsdSuocth(tieTvreaw=lios2aed5s.pecuifnielde. ss otherwise specified)
  For capacitivePloaarad,mdeetraetre current by 20%
Symbol Test conditions
Min Typ Max Unit
RATINGS
MCarokilnlegcCtoodre-base breakdown voltage
Maximum Recurrent Peak Reverse Voltage
MCaxoimlluemctRoMr-SemVoiltttaegre breakdown voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
V(BR)CBO 1IC2=-1mA1,3IE=0 14 15 16 -12108
10
115 V120
VRRM
20
30
40
50
60
80 100 150 200 Volts
VV(RBMR)SCEO 1IC4=-10m2A1,IB=0 28 35 42 -12056
70
105 V 140
Volts
MEaxmimitutmerD-bCaBsloeckbinregaVkodltaogwe n voltage
Maximum Average Forward Rectified Current
 
PeCaok lFloercwtaordr Scuurgt-eoCfufrcreuntrr8e.3nmts single half sine-wave
superimposed on rated load (JEDEC method)
TyEpmicaitl tTehrercmuatl-oReffsicstuarnrceen(Nt ote 2)
TyDpCicacl uJurnrcetniotngCaaipnacitance (Note 1)
Operating Temperature Range
  StCoroalgleecTteomrp-eermatiutrteeRr asnagteuration voltage
VV(BDRC)EBO
IO
  ICBO
IFSM
RIΘEJBAO
CThJJFE
TVSCTEG(sat)
2IE0=-1mA3,I0C=0 40
VCB=-120V,IE=0
VEB=-5V,I C=0
 
VCE=--555V,tIoC=+1-12050mA
IC=-500mA,IB=-50mA
50
60
1.0
 
30
-580
100 150
-0.1
40
  120 80
- 65 to +175
  -0.1
 
-55 to +150 240
-1
V 200
μA  
μA
V
Volts
Amps
Amps
℃/W
PF
Base-emitter vCoHltAaRgAeCTERISTICS
Maximum Forward Voltage at 1.0A DC
MTaxraimnusmitAiovnerafrgeeqRueevenrcseyCurrent at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
  NOCToElSle: ctor output capacitance
SYMVBBOE L FM12V0C-ME=H-F5MV1,3I0C-=M-H5F0M01m40A-MH FM150-MH FM160-MH FM180-MH FM1100-MH F-M11150-MH FVM1200-MH UNIT
VF
0.50
0.70
0.85
0.9 0.92 Volts
IRfT VCE=-5V,IC=-100mA
0.5 120
10
 
MHz
mAmps
Cob VCB=-10V,IE=0,f=1MHz
30 pF
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
CLASSIFICATION OF
hFE
Rank
O
Y
Range
80-160
120-240
M2a0r1ki2n-g06
2012-0
DO DY
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.




WILLAS

2SA1201 Datasheet Preview

2SA1201 Datasheet

Plastic-Encapsulate Transistors

No Preview Available !

WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SA120T1HRU
FM1200-M+
Pb Free Product
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
Outline Drawingoptimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.181(4.60)
Epoxy : UL94-V0 rated flame reta.1rd7a3nt(4.39)
Package outline
S O T- 8 9SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
Method 2026
.061REF
Polarity : Indicated by cathode ba(1nd.55)REF
0.031(0.8) Typ.
.063(1.60)
.055(1.40)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
.167(4.25) RATINGS
MMaa.1rxkim5inu4gm(C3oRd.e9ecu1r)rent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM14.01-M0H2F(M21.560-0MH) FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
12 13 1.4091(21.530) 16 18 10 115 120
VRR.M023(020.58) 30 40 50 60
VRM.S016(014.40) 21 28 35 42
VDC 20 30 40 50 60
80 100 150 200 Volt
56 70
105 140 Volt
80 100 150 200 Volt
Maximum Average Forward Rectified Current
IO
1.0 Amp
  
Peak Forward.0Su4rg7e(C1u.rr2en)t 8.3 ms single half sine-wave IFSM
  
30 Amp
superimposed.0on3ra1te(d0l.o8ad) (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
RΘJA
CJ
TJ
 
 
-55 to +125
40
120
 
 
 
-55 to +150
℃/W
PF
Storage Temperature Range
 
.060TYP TSTG
(1.50)TYP
.197(0.52)
.013(0.32)
- 65 to +175
.017(0.44)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
.118TSYYVMPFBOL
FM120-MH
FM130-MH FM140-MH
0.50
FM150-MH FM160-MH
0.70
FM1.800-1MH4 (F0M1.13050-)MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
UNI
Volt
Maximum Average Reverse Current at
@T
A=25(3.
0
)
T
YP
IR
Rated DC Blocking Voltage
@T A=125℃
0.5  
mAm
10
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
Dimensions in inches and (millimeters)
2012-06
2012-0
WILLAS ELECTRROeNv.ICC CORP.
WILLAS ELECTRONIC CORP.


Part Number 2SA1201
Description Plastic-Encapsulate Transistors
Maker WILLAS
PDF Download

2SA1201 Datasheet PDF





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