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WILLAS

2SC4672 Datasheet Preview

2SC4672 Datasheet

NPN Transistor

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WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SC4672 THRU
FM1200-M+
Pb Free Produc
Features
TRANSISBaTtOchRpr(oNcePsNs )design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURLEoSw profile surface mounted application in order to
z LowLoSopwtaimtpuiozrwaeetbiroolnaorsdVs,sohplitagachgee.efficiency.
z ExceHlilgehnctuhrFreEnCt chaapraabciltietyr,ilsotwicfsorward voltage drop.
z ComHpiglehmsuerngetscathpeab2ilSityA. 1797
z Pb••-FUGrluteraeardhpriiganhcg-ksfoaprgeoeevdeissrvwaoitlvctaahgiinleagpb. rloetection.
RoHSSilipcorondeupcittafxoiarlppalacnkainr gchcipo,dmeestaulfsfiixlic"oGn"junction.
HaloLgeeand -freee pparrot sdumceteftoernpvai rcoknimnegnct aoldset asnudfafrixd s"Ho f"
z MoiRMsotIHuL-SrSepTrDSod-e1unc9t5sf0oit0ripv/2aic2tyk8inLgecovdeel s1uffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Epoxy : UL94-V0 rated flame retardant
MAXIMUCMasRe :AMToINldeGdSpl(aTstai=c,2S5OD-u12n3lHess otherwise noted)
SymboTlermi
nal
s
:Plated
te
rminaPlsa,rsaomldeetrearb
le
per
MIL-STD-75
,
0
VCBO
CollecMtoerth-Boads2e02V6oltage
Package outline
SOT-89
SOD-123H
1. BASE
0.146(3.7)
0.130(3.3)
2. COLLECTOR
3. EMITTER
0.031(0.8) Typ.
Value
Unit
60 V
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
VCEOPolariCtyo:llIencdtiocra-tEemd ibttyecr aVtohlotadgeeband
VEBOMountEinmgitPteors-iBtiaosne: AVnoyltage
IC WeighCt o: AllepcptroorxCimuarrteendt0.011 gram
50 DVimensions in inches and (millimeters)
6V
2A
PC CMoAlleXcItoMrUPMowRerADTiIsNsiGpaStioAnND ELECTRICAL CHARA5C0T0ERISTICSmW
RatRinθgJsAat 25℃ThaemrbmieanltRteemspisetraantucree FunrolemssJouthnecrtwioisneTsopeAcmifibeide.nt 250 /W
SinglTej phase haJluf nwcatvioen, 6T0eHmz,preersaistutivre of inductive load.
150
  ForTcsatpgacitive lSoatodr,adgeeraTteemcuprreernattbuyre20%
-55~+150
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
EMMLaaErxkiCminugTmCRoRIdCeecAurrLenCt PHeaAkRReAvCersTeEVRoltIaSgeTICS (Ta=2V5RRM unle12s20 s oth13e30rwise41s04pecif51ie05d)
16
60
18 10
115 120
80 100 150 200
Maximum RMS Voltage
Maximum DCPBalorcakmingetVeorltage
VRMS
14
21
28
35
42
Symbol
VDC
20Test 3c0onditio40ns
50
M6in0
56
Ty8p0
70
Ma10x0
105
Un1i5t 0
CMoaxllimecutmoAr-vbearasgee bForerwaakrddoRwecntifiveod lCtaugrreent
V(BR)ICOBO IC=50µA,IE=0
60 1.0
V
  Collector-emitter breakdown voltage
V(BR  )CEO
Peak Forward Surge Current 8.3 ms single half
Esumpeirtitmepro-sbeadsoen rbarteedalokaddo(JwEnDEvComlteatghoed)
sine-waveV(BRIF)ESBMO
IC=1mA,IB=0
IE=50µA,IC=0
50  
6 30
V
V
CTyoplilceacl Ttoherrcmuatl -Roefsfisctuanrcreen(Ntote 2)
ETympiictatel Jrucnucttio-on fCfacpuarcriteanncte (Note 1)
DOStCpoerarcaguteinrTrgeeTmnetpmegpraaetriuanrteurRe aRnagnege
ICRBΘOJA
IEBCOJ
hTFSTETJG
VCB=60V,IE =0
 
VEB=5V,IC=0
-55 to +125
VCE=2V, IC=500mA
40
120
 
8-265 to +175
  0.1
  0.1
-55 to +150
390
µA
µA
  Collector-emitter saturation voltage
VCE(sat) IC=1A,IB=50mA
0.35 V
140
200
 
Transition frequCeHnAcRyACTERISTICS
CMoaxlilmecumtoFroorwuatprduVtocltaagpeaactit1a.0nAcDeC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 CLASSIFICATION OF hFE
NOTES:
@T A=125℃
SYfTMBOL FMV1C20E-=M2HVF,MIC1=300-M.5HAF,Mf1=4100-M0HMFHM1z50-MH FM160-MH F2M11080-MH FM1100-MH FMM1H1z50-MH FM1200-MH
CVobF VCB=10V, IE=00,.5f=01MHz
IR
0.70 25 0.85
0.5
0.9
pF
0.92
 
10
1- Measured atR1AMNHZKand applied reverse voltagePof 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
  RANGE
82180
 
MARKING
DKP
Q
120270
DKQ
R
180390
DKR
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.




WILLAS

2SC4672 Datasheet Preview

2SC4672 Datasheet

NPN Transistor

No Preview Available !

WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Typical CharacSOteDr-1i2s3i+ticPsACKAGE
FM120-M+
2SC4672 THRU
FM1200-M+
Pb Free Produc
Static Characteristic
1.0
FeaturesCOMMON EMITTER
300
BTaat=c25hprocess design, excellen4t.0pmoAwer dissipation offers
0.8 better reverse leakage current and thermal resistance.
Low profile surface mounted app3.6limcAation in order to
PackagehFE outlICine
COMMON EMITTER
VCE=2V
Ta=100
SOD-123H
optimize board space.
3.2mA
0.6 Low power loss, high efficiency. 2.8mA
High current capability, low forwar2d.4mvAoltage drop.
200
Ta=25
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.4 High surge capability.
2.0mA
Guardring for overvoltage protection.
Ultra high-speed switching.
1.6mA
0.2
Silicon
epitaxial
planar
chip,
metal
1.2mA
s0i l.8i cmoA n
junction.
0.0
Lead-free parts meet
MIL-STD-19500 /228
environmentaIlB=s0t.4amnAdards
of
0RoHS produ1ct for packin2g code suffix3"G"
4
COLLECTOR-EMITTER VOLTAGE
Halogen free product for packing
coVdCEe
(V)
suffix
"H"
100
0
0.1
0.3 1
COLLECTOR CURRENT IC (A)
0.071(1.8)
0.056(1.4)
2
Mechanical dVCEsat ata— IC
0.5
Eβp=2o0xy : UL94-V0 rated flame retardant
VBEsat —— IC
1.2 0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
0.4
Terminals
:Plated
terminals,
solderable
per
,1.0
MIL-STD-750
Method 2026
0.3
Polarity : Indicated by cathode band
0.8
0.2 Mounting Position : Any Ta=100
0.6
0.031(0.8) Typ.
Ta=25
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Ta=100
Weight : Approximated 0.011 gram
0.1
MAXIMUM
RATINGS
Ta=25
AND
ELECTRICAL
CH0.A4 RACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single0.p00h.1ase half wave, 600.H3 z, resistive of indu1ctive load. 2
0.2
0.1
0.3
β=20
12
  For capacitive load, dCeOraLLteECcTuOrRreCnURt RbEyN2T0%IC (A)
COLLECTOR CURRENT IC (A)
RATINIGC S —— VBE
Marking2CodCeOMMON EMITTER
Maximum RVeCcEu=2rVrent Peak Reverse Voltage
Maximum1 RMS Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FCMob1/5C0i-bMHFM160V-MCBH/ VFEMB 180-MH FM1100-MH FM1150-MH FM1200-MH
1000
12 13
14 15
16
18 f=1MHz10
115 120
VRRM
20
30
40
50
60
VRMS
14
21
28
35 Cib 42
80 IE=0/IC=1000
56 Ta=2570
150 200
105 140
Maximum DC Blocking Voltage
VDC 20 10030 40 50 60
80 100 150 200
 
Maximum Average ForwarTda=R10e0ctified Current
Peak Forward Surge Current 8.3 ms single haTalf=2s5ine-wave
superim0p.3osed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
IO
 
IFSM
RΘJA
CJ
TJ
10
 
 
-55 to +125
Cob 1.0
 
30
40
120
 
 
 
-55 to +150
 
Storage0.1T0.e2 mperatur0e.4 Range 0.6 0.8 1.0
  BASE-EMMITER VOLTAGE VBE (V)
CHARACTERISTICS
Maximu60m0 Forward Voltage at P1C.0ADC Ta
TSTG1.2
1
0.1 0.3
1 - 65 to3 +175 10
20
REVERSE VOLTAGE V (V)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9 0.92
Maximum Average Reverse Current at @T A=25℃
Rated D50C0 Blocking Voltage
@T A=125℃
IR
0.5  
10
 
NOTES4: 00
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Therm30a0 l Resistance From Junction to Ambient
 
 
200
100
0
0 25
2012-06
50 75 100
AMBIENT TEMPERATURE Ta ()
125
2012-0
150
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.


Part Number 2SC4672
Description NPN Transistor
Maker WILLAS
Total Page 4 Pages
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