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WILLAS

2SK3541M3T5 Datasheet Preview

2SK3541M3T5 Datasheet

MOSFET

No Preview Available !

WILLAS
S1.0OA TSU-7RF2A3CEPMlOaUsNtTicSC-EHOnTcTKaYpBsAuRRlaIEtReREMCTOIFSIERFSE-2T0SV- 200V
SOD-123+ PACKAGE
FM120-M+
6.0TH7RU
FM1200-M+
Pb Free Product
Features
Package outline
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOD-123H
N-LoCophwtimapnioznweeeblrolMaorsOds,sShpFiagEcheTe. fficiency.
F••EHHAiiggThhUscRuurrEgreeSnct acpaapbaibliitlyit.y, low forward voltage drop.
zGuaLrdorwingofnor-roevseirsvtoaltnacgee protection.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-723
zUltraFhaisght -sswpeitecdhsinwgitcshpinege. d
••zLSeilaicdLo-onfrweeepviptoaaxlrtitaaslgmpeleaedntraeirvncevhirimpo,nammkeeetnastlatslhisliistcaondndejauvrnidccsetiooifnd.eal for portable equipment
zMIL-DSrTivDe-1c9i5r0c0u/i2ts28can be simple
zRHoaHloSPgeapnrrofardeluleectpl fruoorsdpueacctiskfoinregpaacsocykdiengsucfofidxe"Gsu"ffix "H"
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
Mechanical data
APEPpLoIxCy A: UTLI9O4-NVS0 rated flame retardant
0.040(1.0)
0.024(0.6)
InCtaesrefa:cMinoglde, dSpwlaitsctihc,inSgOD-123H
Terminals :Plated terminals, solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
MAPRolaKriItNy G: In:KdiNcated by cathode band
Dimensions in inches and (millimeters)
Mounting Position : Any
KNWeight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capPabci-tFivreeloeadp,adcekraategceurirsenat vbya2il0a%ble
RoHS produRcAt TfoINrGpSacking code suffiSxYM”GBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
MarkingHCaoldoegen free product for packing
Maximum Recurrent Peak Reverse Voltage
code suffix
VRRM
12H20
13
30
14
40
15
50
16
60
18 10
115 120
80 100 150 200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56 70
105 140
Maximum*DACpBrolotcekcintigonVodltiaogdee is included between VthDeC gate a2n0d the s3o0urce te4rm0 inals t5o0protect60the diode80against1s0t0atic elec15tr0icity 200
MaximumwAhveernagtheeFoprrwoadrducRteicstifiineduCsuer.reUnst e a protectiIoOn circuit when the fixed voltages are exceed1e.0d.
  
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
sTuyppeicriaml pTMohseaerdxmoiamnl Rrauetesmdisltoaranadcte(JinE(NDgoEtseC 2(mT)eath=od2)5
Typical Junction Capacitance (Note 1)
unlessRΘoJtAherwise
CJ
note  d)
 
Operating Temperature Range
Parameter
TJ
-55Styom+1b2o5l
 
30
40  
120  
  Value -55 to +150
 
Units
Volts
Volts
Amps
Amps
℃/W
PF
  StorageDTreaminp-esraotuurreceRavnogletage
Gate-sourcCeHAvRolAtaCgTeERISTICS
TSTG
VDS
- 65 to +175
30
V
SYMBOL FM120-MH FM130V-MGSH FM140-MH FM150-MH FM160-M±H20FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
MaximumCoFnotriwnaurod uVsoldtargaeinatc1u.0rrAeDntC
MaximuPmoAwveerragdeisRseipvaertsioenCurrent at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
VF
IR
ID0.50
PD
0.70 ±100
00..515
10
0.85
0.9 mA 0.92
 
W
Volts
mAmps
  Thermal resistance from junction to ambient
NOTES:
1- MeasuJreudnactt1ioMnHtZemanpdearpaptliuerdereverse voltage of 4.0 VDC.
2- ThermSaltRoerasigsteantceemFproemraJutuncretion to Ambient
 
 
* Pw10µs ,Duty cycle1%
RθJA
TJ
Tstg
833
150
-55 ~+150
/W
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.




WILLAS

2SK3541M3T5 Datasheet Preview

2SK3541M3T5 Datasheet

MOSFET

No Preview Available !

WILLAS
1S.0OA STU-R7F2AC3E PMOlaUNsTtiScC-HEOnTTcKaY pBAsRuRlIEaRteREMCTOIFIESRFSE-2T0VS- 200V
SOD-123+ PACKAGE
FM120-M+
6.0THR7U
FM1200-M+
Pb Free Product
Features
Package outline
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOD-123H
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
High surge capability.
EleGcutarridcrainlgcfhoraorvaecrtveolrtiasgteicpsro(teTcat=io2n5. unless otherwise noted)
Ultra high-speed switching.
Silicon epitaxPiaal rpalamneatrecrhip, metal silicon junScytimonb.ol
Test Condition
Min
DrLMaeIinaL-d-sS-ofTrueDrec-1ep9ab5rrt0es0am/k2ed2eo8twennvvioroltnamgeental standarVds(BoRf) DSS VGS = 0V, ID =10µA
30
GRatoeH-Ssopurorcdeuclet faokrapgaeckcinugrrceondte suffix "G"
IGSS
Halogen free product for packing code suffix "H"
ZMereocghateavnoiltcagael ddraaintacurrent
IDSS
VDS =0V, VGS =±20V
VDS =30V, VGS =0V
GEatpeotxhyre: sUhLo9l4d-vVo0ltraagteed flame retardant
VGS(th) VDS =3V, ID =100µA
0.8
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Typ Max
±1
1.0
1.50.040(1.0)
0.024(0.6)
Unit
V
µA
µA
V
Case : Molded plastic, SOD-123H
VGS =4V, ID =100.0m31(A0.8) Typ.
StTaetircmdinraailns-:sPolautrecde
on-state resistance
terminals, solderable
per
RDS(on)
,
MIL-STD-750VGS
=2.5V,
ID
=1mA
5 80.031(0.8) Typ.
7 13
Method 2026
Forward transconductance
Polarity : Indicated by cathode band
InMpuotucnatipnagcPitoasnictieon : Any
gFS VDS =3V, ID =10mA
20
Dimensions in inches and (millimeters)
Ciss 13
OWutpeuigthcta:pAapcpitraonxcimeated 0.011 gram
Coss VDS =5V,VGS =0V,f =1MHz
9
mS
pF
Reverse transfer capacitance
Crss
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RatingsTautr2n5-on daemlabiyentitmteemperature unless otherwise spetcdi(foine)d.
4
15
Single pRhisaesetihmaelf wave, 60Hz, resistive of inductive load. tr
  For capTaucritniv-eoflfoadde,ladyertaimteecurrent by 20%
td(off)
VGS=5V,VDD=5V, ID =10mA
RL=500,RG=10
35
ns
80
Fall time
Marking Code
RATINGS
SYMBOL FtfM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM810100-MH FM1150-MH FM1200-MH UNIT
12 13 14 15 16
18 10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140 Volts
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200 Volts
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
IO
 
IFSM
RΘJA
CJ
TJ
TSTG
 
 
-55 to +125
1.0
 
30
40
120
 
- 65 to +175
 
 
-55 to +150
Amps
 
Amps
℃/W
PF
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50 0.70
0.85
0.9 0.92 Volts
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
NOTES:
@T A=125℃
IR
0.5  
mAmps
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.


Part Number 2SK3541M3T5
Description MOSFET
Maker WILLAS
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2SK3541M3T5 Datasheet PDF






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