Datasheet4U.com

SE2305GD - P-Channel High Density Trench MOSFET

WILLAS

📥 Download Datasheet

SE2305GD Datasheet Preview — Preview of SE2305GD PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	SE2305GD
Manufacturer	WILLAS
File Size	919.04 KB
Description	P-Channel High Density Trench MOSFET
Datasheet	SE2305GD-WILLAS.pdf

SE2305GD Product details

Description

The SE2305GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

High power and current handing capability.
Lead free product is acquired.
Surface mount package.
Moisture Sensitivity Level 1 G S.

📁 SE2305GD Similar Datasheet

SE23T20B24B - Standard Capacitance Tvs Diode Array (SEMIWILL)
SE23T35U12B - Electrostatic Discharge Protection Device (Semiware)
SE2002-DC70A - High speed thermal printhead (Rohm)
SE2002-DC90A - High speed thermal printhead (Rohm)
SE2003-DC70A - High speed thermal printhead (Rohm)
SE2003-DC90A - High speed thermal printhead (Rohm)
SE2004-DC70A - High speed thermal printhead (Rohm)
SE2004-DC90A - High speed thermal printhead (Rohm)

Other Datasheets by WILLAS

SE2302GD - N-Channel Plastic-Encapsulate MOSFETS
SE2310 - SOT-23 Plastic-Encapsulate MOSFETS
SE2311B - P-Channel MOSFET

Published: Feb 25, 2020 |