SE2311B Overview
Description
The 6(2311B is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The 6(2311B meet the RoHS and Green Product requirement with full function reliability approved.
Key Features
- Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available
