SE2311B - P-Channel MOSFET

WILLAS

SE2311B Datasheet Preview — Preview of SE2311B PDF

Datasheet Details

Part number	SE2311B
Manufacturer	WILLAS
File Size	582.18 KB
Description	P-Channel MOSFET
Datasheet	SE2311B-WILLAS.pdf

SE2311B Product details

Description

The 6(2311B is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Features

Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1,2 Total Power Dissipation3 Linear Derating Factor VDS VGS ID @TA=25℃ ID @TA=70℃ IDM @TA=25℃ PD @TA=25℃ - Operating Junction and Storage Temperature Range TJ, TSTG Thermal Data Parameter Thermal Resistance Junction-ambient1 Symbol RθJA Rati.

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Published: Feb 25, 2020 |