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PRIMARY CHARACTERISTICS
VRRM
40V,60V,100V,150V,200V
IO 3.0A
VF 0.45V,0.55V,0.75V,0.82V,0.85V
TJ,Max
150℃,175℃
SMA(DO-214AC)
● Body Marking Example
Marking :60$a60$
Ex :SM$
PACKAGE
Logo
Date Code
Marking Code
VYM
S0$
FEATURES
Low Profile surface mount applications in order to
optimize board space
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
Guard ring for overvoltage protection
Ultra high-speed switching
Silicon epitaxial planar chip,metal silicon junction
Moisture Sensitivity Level 1
V:Product Lines
Y:A.D. late code, EX : 4-2014,5-2015
M:Month, EX : 1-1,2-2,---10-O,11-N,12-D
+
MECHANICAL DATA
Case：Molded plastic,
SMA(DO-214AC)
-
Polarity：Indicated by cathode
band
Terminals :Plated terminals,
solderable per
MIL-STD-750,Method 2026
Epoxy : UL94-V0 rated flame
retardant
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Marking Code
Symbol
SM34A
SM34A
SM36A
SM36A
SM310A
SM310A
SM315A
SM315A
SM320A
SM320A
Units
Max. Repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Max. Instantaneous forward voltage
@3.0A, TA=25°C
Operating Temperature
VRRM
VDC
VRMS
VF
TJ
40 60 100
40 60 100
28 42 70
0.45 0.55 0.75
-50 to +150
150 200
150 200
105 140
0.82 0.85
-50 to +175
V
V
V
V
°C
Parameter
Conditions
Symbol
Forward rectified current
Forward surge current
Reverse Current
Thermal Resistance
see Fig.1
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
VR =VRRM TA=25°C
VR =VRRM TA=100°C
Junction to ambient
IO
IFSM
IR
IR
RθJA
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage
CJ
Storage temperature
TSTG
MIN.
-50
TYP.
55
250
MAX.
3.0
Units
A
125 A
0.5 mA
20 mA
°C/W
pF
+175
°C
2015.0ϱ
www.willas.com.tw
Rev.<0ϭ^
P1
