Datasheet Details
| Part number | SBF13009-O |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 601.39 KB |
| Description | High Voltage Fast-Switching NPN Power Transistor |
| Datasheet | SBF13009-O_WINSEMISEMICONDUCTOR.pdf |
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Overview: .. SBF13009-O High Voltage Fast-Switching NPN Power Transistor.
| Part number | SBF13009-O |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 601.39 KB |
| Description | High Voltage Fast-Switching NPN Power Transistor |
| Datasheet | SBF13009-O_WINSEMISEMICONDUCTOR.pdf |
|
|
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This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 12* 25 6.0 12 50 2.2 -40 ~ 150 -40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 2.50 62.5 Units ℃/W ℃/W 1 SBF13009-O Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol VCEO(sus) Value Parameter Test Conditions Min 400 Typ Max 1.0 1.5 3.0 2.0 1.2 1.6 1.5 10 40 30 10 0.8 Units V Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A V VCE(sat) Collector-Emitter Saturation Voltage Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Tc=100℃ I Ic=5.0A,Ib=1.0A - V V VBE(sat) Base-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Ic=8.0A,Ib=1.6A Tc=100℃ 10 6 4 4 V uA IEBO hFE ts tf fT Emitter-Base Cutoff Current DC Current Gain Storage Time Fall Time Current Gain Band with Prouct Veb=9V,Ic=0V Vce=5V, Ic=5.0A Vce=5V, Ic=8.0A VCC=5.0V , (UI9600) Ic=0.5A ㎲ Vce=10V, Ic=0.5A MHz Note: Pulse Test : Pulse width 300, Duty cycle 2% .
SBF13009-O Fig.
| Part Number | Description |
|---|---|
| SBF13007-O | High Voltage Fast-Switching NPN Power Transistor |