900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






WINSEMI SEMICONDUCTOR

SBP13007D Datasheet Preview

SBP13007D Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

SBP13007D
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
Minimum Lot-to-Lot hFE Variation
Wide Reverse Bias SOA
Built-in free wheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TSTG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at TC = 25
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
700
400
9.0
8.0
16
4.0
8.0
80
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case
www.DataSheet4UR.cθoJAm
Thermal Resistance Junction to Ambient
Value
1.67
62.5
Units
/W
/W
Oct 2008. Rev. 0
Copyright @ Semiwell Semiconductor Co.,Ltd.,All rights reserved.
1/4




WINSEMI SEMICONDUCTOR

SBP13007D Datasheet Preview

SBP13007D Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

SBP13007D
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
Colletor Cut-off Current
ICEV ( VBE = -1.5V )
VCE = 700V
VCE = 700V ,TC = 100
Value
Min Typ Max
- - 1.0
- - 5.0
Units
mA
VCEO(SUS) Collector-Emitter Sustaining Voltage IB = 0, IC = 10mA
400 -
-
V
VCE(sat)
VBE(sat)
hFE
ts
tf
fT
VF
COB
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC =2.0A, IB = 0.4A
IC = 5.0A, IB = 1.0A
IC = 8.0A, IB = 2.0A
IC =2.0A, IB = 0.4A
IC = 5.0A, IB = 1.0A
DC Current Gain
IC = 2.0A, VCE = 5V
IC = 5.0A, VCE = 5V
Storage Time
Fall Time
Current Gain Bandwidth Product
Diode Forward Voltage
Output Capacitance
IC = 5.0A, VCC = 125V
IB1 = 1.0A, IB2 = -1.0A
TP = 25us
IC=0.5A ,VCE=10V
IF=2A
IC=0.5A ,VCE=10V
0.6
- - 1.5
3.0
1.2
--
1.6
10 40
10 30
V
V
3.6
-
-
1.6
4-
- MHz
- - 2.5 V
- 6.5
pF
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
www.DataSheet4U.com
2/4
.


Part Number SBP13007D
Description High Voltage Fast-Switching NPN Power Transistor
Maker WINSEMI SEMICONDUCTOR
PDF Download

SBP13007D Datasheet PDF





Similar Datasheet

1 SBP13007-H1 High Voltage Fast-Switching NPN Power Transistor
SemiWell Semiconductor
2 SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor
SemiWell Semiconductor
3 SBP13007-O High Voltage Fast-Switching NPN Power Transistor
WINSEMI SEMICONDUCTOR
4 SBP13007-X High Voltage Fast-Switching NPN Power Transistor
WINSEMI SEMICONDUCTOR
5 SBP13007A High Voltage Fast-Switching NPN Power Transistor
ETC
6 SBP13007D High Voltage Fast-Switching NPN Power Transistor
WINSEMI SEMICONDUCTOR
7 SBP13007S High Voltage Fast-Switching NPN Power Transistor
WINSEMI SEMICONDUCTOR





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy