SBP13007D Datasheet | WINSEMI SEMICONDUCTOR

Features - - - - Very High Switching Speed Minimum Lot-to-Lot h FE Variation Wide Reverse Bias SOA Built-in free wheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at TC = 25℃ Operation Junction Temperature Storage Temperature t P = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Thermal Characteristics Symbol RθJC RθJA .. Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.67 62.5 Units ℃/W ℃/W Oct 2008. Rev. 0 Copyright @ Semiwell Semiconductor Co.,Ltd.,All rights reserved. 1/4 Electrical Characteristics (TC=25℃ Symbol ICEV VCEO(SUS) Parameter Colletor Cut-off Current ( VBE = -1.5V ) Collector-Emitter Sustaining Voltage unless otherwise noted) Value Test Conditions VCE = 700V VCE = 700V ,TC = 100℃ IB = 0, IC = 10m A IC =2.0A, IB = 0.4A Min 400 Typ Max 1.0 5.0 0.6 1.5 3.0 10 10 1.2 1.6 40 30 3.6 1.6 2.5 Units m A V VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0A, IB = 1.0A IC = 8.0A, IB = 2.0A VBE(sat) Base-Emitter Saturation Voltage IC =2.0A, IB = 0.4A IC = 5.0A, IB = 1.0A V h FE DC Current Gain IC = 2.0A, VCE = 5V IC = 5.0A, VCE = 5V ts tf f T VF COB Storage Time Fall Time Current Gain Bandwidth Product Diode Forward Voltage Output Capacitance IC = 5.0A, VCC = 125V IB1 = 1.0A, IB2 = -1.0A TP = 25us IC=0.5A ,VCE=10V IF=2A IC=0.5A ,VCE=10V 4 6.5 - ㎲ MHz V p F Note: Pulse Test : Pulse width 300, Duty cycle 2% .. 2/4 . Fig. 1 DC Current Gain Fig. 2 Saturation Voltage Fig. 3 Power Derating Fig. 4 Safe Operation...