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WINSEMI SEMICONDUCTOR

SBP13007S Datasheet Preview

SBP13007S Datasheet

High Voltage Fast-Switching NPN Power Transistor

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SBP13007S
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
VEBO
IC
ICP
IB
IBM
PC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25
Total Dissipation at Ta = 25
TJ Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
700
400
9.0
8.0
16
4.0
8.0
80
2.1
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
Thermal Characteristics
Symbol
Parameter
www.DataSheet4UR.cθoJcm Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
1.56
62.5
Units
/W
/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
1/5




WINSEMI SEMICONDUCTOR

SBP13007S Datasheet Preview

SBP13007S Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

SBP13007S
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Value
Units
Min Typ Max
400 -
-V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=2.0A
0.5
- - 1.0 V
2.5
VBE(sat) Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
ICBO
(Vbe=-1.5V)
hFE DC Current Gain
Resistive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Ic=5.0A,Ib=1.0A
Tc=100
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
Ic=5.0A,Ib=1.0A
Tc=100
Vcb=700V
Vcb=700V, Tc=100
Vce=5V,Ic=2.0A
Vce=5V, Ic=5.0A
VCC=125V , Ic=5.0A
ITBp1==12.50A ,
IB2=-1.0A
- - 2.5 V
1.2
--
V
1.6
- - 1.5 V
1.0
--
mA
5.0
10 - 40
5 - 40
-
1.5 3.0
0.17 0.4
VCC=15V ,Ic=5A
LIB=1=01.3.05Am,HI,BV2=cla-2m.p5=A300V
- 0.8 2.0
- 0.06 0.12
VCC=15V ,Ic=1A
LIB=1=00.3.45Am,HI,BV2=c-la1m.0Ap=300V
-
1.0 3.0
Tc=100- 0.07 0.15
Note:
www.DataSheet4U.com Pulse Test : Pulse width 300, Duty cycle 2%
2/5
.


Part Number SBP13007S
Description High Voltage Fast-Switching NPN Power Transistor
Maker WINSEMI SEMICONDUCTOR
PDF Download

SBP13007S Datasheet PDF






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