• Part: SBP13007S
  • Description: High Voltage Fast-Switching NPN Power Transistor
  • Category: Transistor
  • Manufacturer: WINSEMI SEMICONDUCTOR
  • Size: 328.18 KB
Download SBP13007S Datasheet PDF
WINSEMI SEMICONDUCTOR
SBP13007S
Features - Very High Switching Speed - High Voltage Capability - Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature t P = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 2.1 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol .. RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.56 62.5 Units ℃/W ℃/W Jan 2009. Rev. 0 Copyright @Win...