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WINSEMI SEMICONDUCTOR

SBR13003B1 Datasheet Preview

SBR13003B1 Datasheet

NPN Power Transistor

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SBR13003B1
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TSTG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc* = 25
Total Dissipation at Ta* = 25
Operation Junction Temperature
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
700
400
9.0
1.5
3.0
0.75
1.5
25
1.14
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Jan 2009. Rev. 1
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
Value
3.12
89
Units
/W
/W
1/5
www.DataSheet.in




WINSEMI SEMICONDUCTOR

SBR13003B1 Datasheet Preview

SBR13003B1 Datasheet

NPN Power Transistor

No Preview Available !

SBR13003B1
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
Value
Units
Min Typ Max
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
400 - - V
VCE(sat)
VBE(sat)
ICBO
hFE
ton
ts
tf
ts
tf
Ic=0.5A,Ib=0.1A
Collector-Emitter Saturation Voltage Ic=1.0A,Ib=0.25A
Ic=1.5A,Ib=0.5A
Base-Emitter Saturation Voltage
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
0.3
- - 0.5
1.0
1.0
--
1.2
Collector-Base Cutoff Current
(Vbe=-1.5V)
Vcb=700V
Vcb=700V, Tc=100
1.0
--
5.0
DC Current Gain
Vce=2V,Ic=0.5A
Vce=2V, Ic=1.0A
10 - 30
5 - 25
Resistive Load
Turn-on Time
Storage Time
Fall Time
VCC=125V ,Ic=1A
TIBp1==02.52A , IB2=-0.5A
- 0.2 1.0
1.5 3.0
0.15 0.4
Inductive Load
Storage Time
Fall Time
VCC=15V ,Ic=1A
LIB=1=00.3.25Am,HI,BV2=c-la0m.5Ap=300V
-
-
1.2 4.0
0.12 0.3
V
V
mA
ts Inductive Load
Storage Time
tf
Fall Time
VCC=15V ,Ic=1A
LIB=1=00.3.25Am,HI,BV2=c-la0m.5Ap=300V -
2.4 5.0
Tc=100- 0.15 0.4
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
www.DataSheet.in
.


Part Number SBR13003B1
Description NPN Power Transistor
Maker WINSEMI SEMICONDUCTOR
Total Page 5 Pages
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