SBR13003B1 - NPN Power Transistor

WINSEMI SEMICONDUCTOR

General Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

Key Features

Very High Switching Speed.
High Voltage Capability.
Wide Reverse Bias SOA General.

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SBR13003B1 npn power transistor by WINSEMI SEMICONDUCTOR - Datasheet Preview

Datasheet Details

Part number	SBR13003B1
Manufacturer	WINSEMI SEMICONDUCTOR
File Size	282.81 KB
Description	NPN Power Transistor
Datasheet	SBR13003B1 Datasheet

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SBR13003B1 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc* = 25℃ Total Dissipation at Ta* = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 1.5 3.0 0.75 Units V V V A A A A W ℃ ℃ tP = 5ms 1.5 25 1.