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SBR13003 Datasheet High Voltage Fast-switching NPN Power Transistor

Manufacturer: SemiWell Semiconductor

Overview: SemiWell Semiconductor SBR13003 High Voltage Fast-Switching NPN Power.

Datasheet Details

Part number SBR13003
Manufacturer SemiWell Semiconductor
File Size 717.26 KB
Description High Voltage Fast-Switching NPN Power Transistor
Datasheet SBR13003_SemiWellSemiconductor.pdf

General Description

This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit.

TO-126 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP < 5 ms ) Base Current Base Peak Current ( tP < 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max.

Operating Junction Temperature Value 700 400 9.0 1.5 3.0 0.75 1.5 40 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 3.12 89 Units °C/W °C/W Oct, 2002.

Key Features

  • - Very High Switching Speed (Typical 120ns@1.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 200mV@1.0A/0.25A) - Wide Reverse Bias S. O. A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General.

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