WFF10N65 Key Features
- 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isol
- Part: WFF10N65
- Manufacturer: WINSEMI SEMICONDUCTOR
- Size: 912.26 KB
Other WFF10N65 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Winsemi |
WFF10N65L | Silicon N-Channel MOSFET |
WFF10N65 Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies,DC-DC power converters,high voltage h-bridge motor drive PWM.