Datasheet Summary
WFF10N65L Product Description
Silicon N-Channel MOSFET
Features
- 10A,650V,RDS(on)(Max1.0Ω)@VGS=10V
- Ultra-low Gate charge(Typical 32nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Enhanced EMI capability
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this product have lower resistance,Superior switching performance and high EAS capability. The product can be widely used in AC-DC switching power supply, DC-DC power converter, and high H bridge PWM motor...
