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WFF10N65 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Key Features

  • 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General.

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Datasheet Details

Part number WFF10N65
Manufacturer WINSEMI SEMICONDUCTOR
File Size 912.26 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF10N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.in F10N6 5 WF WFF 10N65 Silicon N-Channel MOSFET Features � � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies,DC-DC power converters,high voltage h-bridge motor drive PWM.