Datasheet Summary
HIGH VOLTAGE N-Channel MOSFET
600V N-Channel MOSFET
Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge :Qg= 33nC (Typ.)
- BVDSS=600V,ID=10A
- RDS(on) :0.73 Ω (Max) @VG=10V
- 100% Avalanche Tested
GD S
TO‐220F
G‐Gate,D‐Drain,S‐Sourse ...
