| Part Number | WFF10N60 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| Overview |
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche.
* * * * * * 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. Th. |
WFF10N60 Datasheet
The WFF10N60 is a Silicon N-Channel MOSFET.
| Part Number | WFF10N60 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Wisdom technologies |
| Overview |
HIGH VOLTAGE N-Channel MOSFET
WFF10N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charg.
* Low Intrinsic Capacitances * Excellent Switching Characteristics * Extended Safe Operating Area * Unrivalled Gate Charge :Qg= 33nC (Typ.) * BVDSS=600V,ID=10A * RDS(on) :0.73 Ω (Max) @VG=10V * 100% Avalanche Tested GD S D G S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Rat. |